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1 (1.7 MB)
Field emission scanning electron microscopy images depicting stages of a nanostructure reduction process. From top to bottom, gaps between "parent" gold traces on oxidized Si are reduced from ~110 nm to ~65 nm (third row left) and ~25 nm (third row right) by 10-layer and 20-layer molecular ruler resists, respectively. Thin metal wires ~65 nm (bottom left) and ~25 nm (bottom right) wide, respectively, are formed, separated by precisely determined gaps from each of the parent gold traces. |
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2 (0.4 MB)
A field emission scanning electron microscopy image showing a ~30nm gold dot formed in the center of a hollow gold parent structure supported on an oxidized Si substrate. This nanostructure was fabricated by a ‘molecular ruler’ resist process developed to extend the range of conventional nanolithography techniques. |
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3 (0.3 MB)
Same image as above with different coloring. |
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| Image Credits: A. Hatzor, B. A. Mantooth, K. F. Kelly, and P. S. Weiss |